SM945 npn silicon transistor oei 1/ 2 features collector-base voltage v cbo = 60v complement to sm733 to-92 1. emitter 2. collector 3. base absolute maximum ratings (ta=25 ) characteristic symbol SM945 unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-bias voltage v ebo 5 v collector current i c 150 ma collector power dissipation p c 400 mw junction temperature t j 150 storage temperature t stg -55 to +150 ordering information part number operating temperature range package type SM945p -55 ~+150 to-92 h fe classification classification r q p k h fe 90-180 135-270 200-400 300-600
SM945 npn silicon transistor oei 2/ 2 electrical characteristics (t a =+25 ). SM945 characteristics symbol min typ max unit collector-base breakdown voltage i c = 100 a v cbo 60 collector-emitter breakdown voltage i c = 1 ma v ceo 50 emitter-base breakdown voltage i e = 100 a v ebo 5 v collector cut-off current v cb =60v, i e = 0 i cbo 0.1 emitter cut-off current v eb = 5v, i c = 0 i ebo 0.1 a dc current gain v ce = 6v, i c = 2ma h fe 90 600 collector-emitter saturation voltage i c =100ma , i b = 10ma v ce (sat) 0.1 0.25 base-emitter saturation voltage i c =100ma , i b = 10ma v be (sat) 1.0 v transition frequency v ce = 10v, i e = -10ma f t 80 150 mhz collector output capacitance v cb = 10v, i e =0 f=1mhz cob 2.0 3.0 pf noise figure v ce =6v, i c =0.1ma r g =10k ,f=1khz nf 1.0 10 db
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